Physics Maths Engineering
Michaelis–Menten kinetics during dry etching processes
Related Subjects
Abstract
The chemical etching of germanium in Br2 environment at elevated temperatures is described by the Michaelis–Menten equation. The validity limit of Michaelis–Menten kinetics is subjected to the detailed analysis. The steady-state etching rate requires synergy of two different process parameters. High purity gas should be directed to the substrate on which intermediate reaction product does not accumulate. Theoretical calculations indicate that maximum etching rate is maintained when 99.89% of the germanium surface is covered by the reaction product, and 99.9999967% of the incident Br2 molecules are reflected from the substrate surface. Under these conditions, single GeBr2 molecule is formed after 30 million collisions of Br2 molecules with the germanium surface.
Key Questions
1. What is the primary objective of the study?
The study aims to describe the chemical etching of germanium in a Br₂ environment at elevated temperatures using the Michaelis–Menten equation.
2. How does the study relate Michaelis–Menten kinetics to dry etching processes?
The study analyzes the validity of applying Michaelis–Menten kinetics to dry etching processes, suggesting that the steady-state etching rate requires the synergy of two different process parameters.
3. What conditions are necessary for maintaining the maximum etching rate?
Theoretical calculations indicate that the maximum etching rate is maintained when 99.89% of the germanium surface is covered by the reaction product, and 99.9999967% of the incident Br₂ molecules are reflected from the substrate surface.
Summary
Knizikevičius's study applies Michaelis–Menten kinetics to the chemical etching of germanium in a Br₂ environment at elevated temperatures. The research analyzes the validity of this application, emphasizing the need for the synergy of two different process parameters to achieve the steady-state etching rate. Theoretical calculations suggest that maintaining the maximum etching rate requires specific conditions, including a high coverage of the germanium surface by the reaction product and a significant reflection of incident Br₂ molecules from the substrate surface.
